C 1 C T1G4005528-FS 55w, 28v, dc C 3.5ghz, gan rf power transistor datasheet: rev d 8/10/2011 ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? functional block diagram applications military radar ? civilian radar ? professional and military radio ? communications test instrumentation ? avionics ? wideband or narrowband amplifers ? general description the triquint T1G4005528-FS is a 55 w (p 3db ) discrete gan on sic hemt which operates from dc to 3.5 ghz. the device is constructed with triquints proven 0.25 m production process, which features advanced feld plate techniques to optimize power and effciency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifer line-ups and lower thermal management costs. pin confgurations pin # symbol 1 rf output 2 rf input flange source ordering information material no. part no. description eccn 1078974 t1g4005528- fs packaged part: flangeless ear99 1079752 t1g4005528- fs-evb1 3.0-3.5 ghz eval brd ear99 product features frequency: dc to 3.5 ghz ? linear gain: >15 db at 3.5 ghz ? operating voltage: 28 v ? output power (p ? 3db ): 55 w at 3.5 ghz lead-free and rohs compliant ? notes: 1 . un l e ss s p e c i f i ed o t he r w i s e , d i m en s i o n s a r e i n m illimeters 10.992 5.842 .508 1.016 5.461 9.652 3.505 1.524 -.203 +.000 2 1
C 2 C T1G4005528-FS 55w, 28v, dc C 3.5ghz, gan rf power transistor datasheet: rev d 8/10/2011 ? 2011 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? specifcations sym parameter value v + positive supply value 1 28 v v - negative supply voltage range - 10 v to 0 v i positive supply current 1 4.5 a |i g | gate supply current 100 ma p d power dissipation 1 61 w t ch operating channel temperature 1 213 c bv osx breakdown voltage 85 v notes: 1 absolute maximum ratings at 3 ghz. 2 absolute maximum ratings are set based on industry recommended standard mean time to failure (mttf) greater than 1m hours while operating at a maximum case temperature of 85c . operating at lower maximum case temperatures allows maximum operating voltage to be increased up to a maximum of 40v. application specifc limits for operating voltage, positive supply current, and power dissipation can be determined with engineering guidance from triquint. absolute maximum ratings electrical specifcations characteristics symbol min typ max unit conditions break-down voltage drain source bv dsx 85 120 v v gs = -8 v, i d = 10 ma gate quiescent voltage v gs (q) -3.5 v v ds = 28 v; i dq = 0.8 a gate threshold voltage v gs (th) -4.5 v v ds = 10 v; i d = 40 ma saturated drain current i dsx 16 a v ds = 5 v; v gs = 0 v characteristics symbol min typ max unit load pull performance at 3.0 ghz (v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%) linear gain g lin 17.3 db output power at 1 db gain compression p 1db 51.3 w drain effciency at 1 db gain compression de 1db 59.0 % power-added effciency at 1 db gain compression pae 1db 57.6 % gain at 1db compression g 1db 16.3 db load pull performance at 3.5 ghz (v ds = 28 v, i dq = 200 ma; pulse: 100s, 20%) linear gain g lin 17.6 db output power at 1 db gain compression p 1db 55.0 w drain effciency at 1 db gain compression de 1db 62.1 % power-added effciency at 1 db gain compression pae 1db 60.7 % gain at 1db compression g 1db 16.6 db performance at 3.3 ghz in the 3.0 to 3.5 ghz eval. board (v ds = 28 v, i dq = 200 ma; pulse: 100 s, 20%) linear gain g lin 14.0 15.1 db output power p 3db 55.0 65.6 w drain effciency at 3 db gain compression de 3db 50.0 52.5 % power-added effciency at 3 db gain compression pae 3db 45.0 49.3 % gain at 3db compression g 3db 11.0 12.1 db narrow band performance at 3.5 ghz (v ds = 28 v, i dq = 200 ma, cw at p1db, applied for 3.5 secs) impedance mismatch ruggedness 3 vswr 10:1 recommended operating conditions apply unless otherwise specifed: t a =25 c dc characteristics rf characteristics note: 3 vswr testing performed with increasing real impedance value only from reference z to 10 times reference z.
t1g6001528-q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 1 of 15 - disclaimer: sub j ect to chan g e without notice applications ? general purpose rf power ? jammers ? military and civilian radar ? professional and military radio systems ? wideband amplifiers ? test instrumentation ? avionics product features functional block diagram ? frequency: dc to 6 ghz ? output power (p3db): 18 w at 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? low thermal resistance package general description pin configuration the triquint t1g6001528-q3 is a 18 w (p3db) discrete gan on sic hemt which operates from dc to 6 ghz and typically provides >10 db gain at 6 ghz. the device is constructed with triquint?s proven 0.25 m process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1 vd/rf out 2 vg/rf in flange source ordering information part no. eccn description t1g6001528-q3 ear99 packaged transistor t1g6001528-q3 evb1 ear99 5-6 ghz eval board 2 1 2 1 ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ?
t1g6001528-q3 dc ? 6 ghz 18 w gan rf power transistor preliminary data sheet: rev - a 06/14/2011 - 2 of 15 - disclaimer: sub j ect to chan g e without notice ? 2011 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +40 v gate voltage,vg -50 to 0 v drain to gate voltage, vd ? vg 80 v drain current, id 1.5 a gate current, ig -25 to 25 ma power dissipation, pdiss 26 w rf input power, cw, t = 25oc 37 dbm channel temperature, tch 250 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c absolute maximum ratings at 3 ghz. operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 28 30 v idq 50 ma id_drive (under rf drive) 1400 ma vg -3.7 v channel temperature, tch 200 o c electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless ot herwise noted: 25 oc, vd = 28 v, idq = 50 ma, vg = -3.7 v typical . rf characteristics symbol min typ max units load pull performance at 3 ghz (v ds =28v, i dq = 50ma, cw) linear gain g lin 15.0 db output power at 3 db gain compression p 3db 20.0 w drain efficiency at 3 db gain compression de 3db 60 % power-added efficiency at 3 db gain compression pae 3db 56 % gain at 3 db compression g 3db 12.5 db load pull performance at 6 ghz (v ds =28v, i dq = 50ma, cw) linear gain g lin 11.5 db output power at 3 db gain compression p 3db 19.0 w drain efficiency at 3 db gain compression de 3db 60 % power-added efficiency at 3 db gain compression pae 3db 52 % gain at 3 db compression g 3db 8.5 db performance at 5.4 ghz in the 5-6 ghz fixture (v ds =28v, i dq = 50ma, pulse:100s 20%) linear gain g lin 9.0 9.5 db output power at 3 db gain compression p 3db 17.8 21.0 w drain efficiency at 3 db gain compression de 3db 50 58 % power-added efficiency at 3 db gain compression pae 3db 40 45 % gain at 3 db compression g 3db 6.0 6.5 db narrowband performance at 3.5 ghz ( v ds =28v, i d q = 50ma , cw at p1db, applied for 3.5 secs) impedance mismatch ruggedness vswr 10:1 note: vswr testing performed with increasing real impe dance value only from referen ce z to 10 times reference z.
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